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| WT-2300 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT 3.8 AMPERES 1 Features: *Super high dense cell design for low RDS(ON) R DS(ON) <40 m @VGS =4.5V R DS(ON) <60 m @VGS =2.5V R DS(ON) <75 m @VGS =1.8V *Rugged and Reliable *SOT-23 Package DRAIN SOURCE VOLTAGE 20 VOLTAGE 2 SOURCE GATE 3 1 2 SOT-23 Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =125 C) (1) Pulsed Drain Current (2) Drain-Source Diode Forward Current (1) Power Dissipation (1) Maximax Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD R JA TJ, Tstg Value 20 Unite V V A A A W C/W C + -10 3.8 15 1.25 1.25 100 -55 to 150 Device Marking WT2300=S00 WEITRON http://www.weitron.com.tw WT-2300 Electrical Characteristics Characteristic (TA=25 C Unless otherwise noted) Symbol V(BR)DSS VGS (th) IGSS IDSS Min Typ Max Unit Static (2) Drain-Source Breakdown Voltage VGS=0V, ID=250 uA Gate-Source Threshold Voltage VDS=VGS, ID=250 uA Gate-Source Leakage Current + VDS=0V, VGS=-10V Zero Gate Voltage Drain Current VDS=20V, VGS=0V Drain-Source On-Resistance VGS=4.5V, ID=5.0A VGS=2.5V, ID=4.0A VGS=1.8V, ID=1.0A On-State Drain Current VDS=5V, VGS=4.5A Forward Transconductance VDS=5V, ID=5A 20 0.6 0.78 1.5 + -100 1 40 60 75 V V nA uA m 18 5 rDS (on) 32 50 62 ID(on) gfs - - A S Dynamic (3) Input Capacitance VDS=15V, VGS=0V, f=1MHZ Output Capacitance VDS=15V, VGS=0V, f=1MHZ Reverse Transfer Capacitance VDS=15V, VGS=0V, f=1MHZ Ciss Coss Crss - 888 144 115 PF Switching (3) Turn-On Delay Time VGS =4.5V,V DD=10V, I D=1A, R L =10 ,R GEN=6 Rise Time VGS =4.5V,V DD=10V, I D=1A, R L =10 ,R GEN=6 Turn-Off Delay Time VGS =4.5V,V DD=10V, I D=1A, R L =10 ,R GEN=6 Fall Time VGS =4.5V,V DD=10V, I D=1A, R L =10 ,R GEN=6 Total Gate Charge VDS=10V, ID=3.5A, VGS =4.5V Gate-Source Charge VDS=10V, ID=3.5A, VGS =4.5V Gate-Drain Charge VDS=10V, ID=3.5A, VGS =4.5V Drain-Source Diode Forward Voltage VGS=0V, IS=1.25A td(on) tr td(off ) tf Qg Qgs Qgd - 31.8 14.5 50.3 31.9 16.8 2.5 5.4 0.825 - nS nS nS nS nc nc nc V - 1.2 VSD Note: 1. Surface Mounted on FR4 Board t < 10sec. _ < 300us, Duty Cycle < 2%. _ _ 2. Pulse Test : PW 3. Guaranteed by Design, not Subject to Production Testing. WEITRON http://www.weitron.com.tw WT-2300 10 VGS =10.5~2.5V ID , DRAIN CURRENT(A) -I D ,DRAIN CURRENT(A) WE IT R ON 25 25 C 20 Tj =125 C 15 10 5 0 -55 C 8 6 4 2 0 VGS =1.5V 0 1 2 3 4 5 6 0.0 0.5 1 1.5 2 2.5 3 VDS , DRAIN-TO-SOURCE VOLTAGE(V) VGS , GATE-TO-SOURCE VOLTAGE(V) FIG.1. Output Characteristics 1000 C ,CAPACITANCE( P F) FIG.2 Transfer Characteristics 2.2 R DS(ON) , ON-RESISTANCE() Ciss 1.8 1.4 1.0 0.6 0.2 -VGS =4.5V I D =5A 800 600 400 200 0 Coss 0 5 10 15 20 25 Crss 30 0 -50 -25 0 25 50 75 100 125 Tj ( C) VGS , GATE-TO-SOURCE VOLTAGE(V) FIG.3 Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 BVDSS ,NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE(V) GATE-SOURCE THRESHOLD VOLTAGE(V) FIG.4 On-Resistance Variation with Temperature 1.3 ID =250uA 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 VDS =VGS ID =250uA Vth ,NORMALIZED 0 25 50 75 100 125 T j ,JUNCTION TEMPERATURE( C) T j ,JUNCTION TEMPERATURE( C) FIG.5 Gate Threshold Variation with Temperature FIG.6 Breakdown Voltage Variation with Temperature WEITRON http://www.weitron.com.tw WT-2300 IS ,SOURCE-DRAIN CURRENT(A) WE IT R ON 20 10 30 gFS ,TRANSCONDUCTANCE(S) 25 20 15 10 5 0 0 5 10 15 VDS =5V 20 25 1 0 0.4 0.6 0.8 1.0 TJ=25 C 1.2 1.4 IDS ,DRAIN-SOURCE CURRENT(A) V SD ,BODY DIODE FORWARD VOLTAGE(V) FIG.7 Transconductance Variation with Drain Current VGS ,GATE TO SOURCE VOLTAGE(V) FIG.8 Body Diode Forward Voltage Variation with Source Current 50 ID , DRAIN CURRENT(A) 25 20 15 10 5 0 0 5 10 15 20 25 30 35 40 VDS =10V ID =3.5A 10 RD S (O L N) im it 10 10 0m s ms 11 DC 1s 0.1 VGS=4.5V Single Pulse 0.03 TC =25 C 0.1 1 10 20 50 Q g ,TOTAL GATE CHARGE(nC) VDS ,DRAIN-SOURCE CURRENT(V) FIG.9 Gate Charge V DD FIG.10 Maximum Safe Operating Area ton td(on) tr 90% toff td(off) 90% 10% tf V IN D VG S R GE N G S RL V OUT V OUT 10% INVE R TE D 90% V IN 50% 10% 50% PULS E WIDTH FIG.11 Switching Test Circuit FIG.12 Switching Waveforms WEITRON http://www.weitron.com.tw WT-2300 WE IT R ON 10 NORMALIZED TRANSIENT THERMAL RESISTANCE 1 0.5 0.2 PDM t1 on 0.1 0.1 0.05 0.02 t2 0.01 0.00001 0.01 Single Pulse 0.0001 0.001 0.01 0.1 1 1. R jA (t)=r (t) * R j A 2. R jA=See Datasheet 3. TjM-TA = PDM* R jA(t) 4. Duty Cycle, D=t1/t 2 10 100 1000 SQUARE WAVE PULSE DURATION(SEC) FIG.13 NORMALIZED THERMAL TRANSIENT IMPEDANCE CUREVE WEITRON http://www.weitron.com.tw WT-2300 SOT-23 Package Outline Dimensions Unit:mm A T OP V IE W B C E G H D K J L M Dim Min Max A 0.35 0.51 B 1.19 1.40 C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 G 1.70 2.10 H 2.70 3.10 J 0.01 0.13 K 0.89 1.10 L 0.30 0.61 M 0.076 0.25 WEITRON http://www.weitron.com.tw |
Price & Availability of WT2300
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